Recently a customer asked about continuously running an SiO2 Sputtering Target and specifically concerns about arcing.
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There is always going to be some &#;re-deposition&#; onto a sputtering target where stray molecules that have been knocked off the target surface reattach back onto the target surface. In your case, using a non-magnetron planar diode cathode assembly with an rf generator this should not be an issue. The ions should be striking the target surface randomly and not in any selected area of the target surface. The rf generator should provide an even, homogeneous plasma uniformly across the entire target surface, bombarding both re-deposited and virgin areas of the SiO2 target surface randomly and equally. The resultant films may vary a bit in stoichiometry as the re-deposited (Si)x(O2-x) areas of the target surface may be slightly silicon rich or oxygen rich depending on the volume of the partial pressure of the oxygen added to the argon working gas, but this should NOT affect the ability of the sputtering process to sustain a constant uniform plasma and deposition.
If there is arcing, you may be building up material within the gap between the dark space shield and the target surface. This should be around 1-3mm or so and the dark space shield should always protrude beyond the target surface by about 3mm or so. Keep this gap area clean, even if it means sanding or abrading the components occasionally. Arcing means that the plasma is going to ground potential for some reason. Make certain that the reflected power on your rf generator is not drifting up with time. This must be kept at absolute zero. Is your rf generator set at constant voltage, constant current or constant power? Check and see if both the current and the voltage are remaining constant over time at whatever power level you are using. Something may be changing. If the impedance in the target is changing, due to re-deposition and/or target thickness changes (becoming thinner over time), the power supply and the tuning network needs to compensate accordingly to maintain an equilibrium balance within the plasma.
Yes, silicon can be sputtered.
Summary: Silicon sputtering is a viable technique in thin film deposition processes, particularly in the semiconductor industry. It involves the use of a silicon target in a vacuum chamber where high-energy particles bombard the target, causing silicon atoms to be ejected and deposited onto a substrate. This process is crucial for creating thin films with specific properties such as electrical conductivity or insulation.
Detailed Explanation:
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Sputtering Process: Sputtering is a physical vapor deposition (PVD) technique where a target material (in this case, silicon) is bombarded with high-energy particles, typically ions of an inert gas like argon. This bombardment causes atoms or molecules from the target to be ejected and subsequently deposited onto a substrate, forming a thin film. The process occurs in a vacuum chamber to prevent contamination and to control the environment effectively.
Reactive Sputtering: In some cases, reactive sputtering is employed, which involves introducing a reactive gas (such as oxygen) into the chamber. When silicon is used as the target material and oxygen is introduced, the sputtered silicon atoms react with the oxygen to form silicon oxide. This method is particularly useful for creating insulating layers in semiconductor devices.
Applications in Semiconductor Manufacturing: Silicon sputtering is extensively used in the semiconductor industry for depositing thin films that serve various functions, such as conductive layers or insulating layers. The purity and uniformity of the sputtered film are critical for ensuring the performance and reliability of the semiconductor devices.
Equipment and Configuration: Sputter systems can be equipped with various options to enhance their functionality, such as sputter etch or ion source capability for cleaning substrate surfaces, substrate preheat stations, and multiple cathodes. These configurations allow for precise control over the deposition process, optimizing the properties of the deposited films.
Advantages: The primary advantage of sputtering silicon is its ability to produce high-quality, uniform thin films with controlled properties. This precision is crucial in the fabrication of complex semiconductor devices where the performance is highly dependent on the quality of the thin films.
In conclusion, sputtering silicon is a well-established and effective method for depositing thin films in the semiconductor industry, offering precise control over film properties and high material purity.
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